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1

Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses

Bahman, A.S., Jensen, S.M., Iannuzzo, F.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.43 MB

english, 2018

2

Investigation of MOSFET failure in soft-switching conditions

F. Iannuzzo, G. Busatto, C. Abbate

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 23.87 MB

english, 2006

3

[Institution of Engineering and Technology 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014) - Manchester, UK (8-10 April 2014)] 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014) - Fast and Accurate Icepak-PSpice Co-Simulation of IGBTs under Short-Circuit with an Advanced PSpice Model

Blaabjerg, F., Rui Wu,, Iannuzzo, F., Huai Wang,

Year:

2014

Language:

english

File:

PDF, 602 KB

english, 2014

4

[IEEE 2014 IEEE Energy Conversion Congress and Exposition (ECCE) - Pittsburgh, PA, USA (2014.9.14-2014.9.18)] 2014 IEEE Energy Conversion Congress and Exposition (ECCE) - An Icepak-PSpice co-simulation method to study the impact of bond wires fatigue on the current and temperature distribution of IGBT modules under short-circuit

Wu, Rui, Iannuzzo, Francesco, Wang, Huai, Blaabjerg, Frede

Year:

2014

Language:

english

File:

PDF, 1.43 MB

english, 2014

5

[IEEE 2016 IEEE Energy Conversion Congress and Exposition (ECCE) - Milwaukee, WI, USA (2016.9.18-2016.9.22)] 2016 IEEE Energy Conversion Congress and Exposition (ECCE) - Development of Simulink-based SiC MOSFET modeling platform for series connected devices

Tsolaridis, Georgios, Ilves, Kalle, Reigosa, Paula D., Nawaz, Muhammad, Iannuzzo, Francesco

Year:

2016

Language:

english

File:

PDF, 1.32 MB

english, 2016

6

[IEEE 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - New Orleans, LA, USA (2020.3.15-2020.3.19)] 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - Isolated DC/AC Converter with ZVT based on Pulsating DC Link

Abbate, Carmine, Busatto, Giovanni, Iannuzzo, Francesco, Marciano, Daniele, Tedesco, Davide

Year:

2020

File:

PDF, 1.29 MB

2020

7

Experimental study of power MOSFET’s gate damage in radiation environment

G. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 315 KB

english, 2006

8

Operation of SiC normally-off JFET at the edges of its safe operating area

Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.43 MB

english, 2011

9

Experimental and numerical investigation on MOSFET's failure during reverse recovery of its internal diode

Busatto, G., Persiano, G.V., Iannuzzo, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 404 KB

english, 1999

10

Development and reliability of the HAM-D/MADRS Interview: An integrated depression symptom rating scale

Rebecca W. Iannuzzo, Judith Jaeger, Joseph F. Goldberg, Vivian Kafantaris, M. Elizabeth Sublette

Journal:

Psychiatry Research

Year:

2006

Language:

english

File:

PDF, 2.10 MB

english, 2006

11

Non-destructive tester for single event burnout of power diodes

G. Busatto, F. Iannuzzo, F. Velardi, J. Wyss

Journal:

Microelectronics Reliability

Year:

2001

File:

PDF, 335 KB

2001

12

[IEEE World Congress on Industrial Applications of Electrical Energy and 35th IEEE-IAS Annual Meeting - Rome, Italy (8-12 Oct. 2000)] Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129) - Lumped charge PSPICE model for high-voltage IGBTs

Busatto, G., Iannuzzo, F., Grimaldi, P.

Year:

2000

Language:

english

File:

PDF, 584 KB

english, 2000

13

Modern IGBT gate driving methods for enhancing reliability of high-power converters — An overview

Luo, Haoze, Iannuzzo, Francesco, Diaz Reigosa, Paula, Blaabjerg, Frede, Li, Wuhua, He, Xiangning

Journal:

Microelectronics Reliability

Year:

2015

Language:

english

File:

PDF, 2.60 MB

english, 2015

14

Reliability issues in power electronics

Iannuzzo, Francesco, Ciappa, Mauro

Journal:

Microelectronics Reliability

Year:

2016

Language:

english

File:

PDF, 194 KB

english, 2016

15

[IEEE 2016 IEEE Energy Conversion Congress and Exposition (ECCE) - Milwaukee, WI, USA (2016.9.18-2016.9.22)] 2016 IEEE Energy Conversion Congress and Exposition (ECCE) - PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation

Ceccarelli, Lorenzo, Iannuzzo, Francesco, Nawaz, Muhammad

Year:

2016

Language:

english

File:

PDF, 1.96 MB

english, 2016

16

[IEEE 2016 IEEE Energy Conversion Congress and Exposition (ECCE) - Milwaukee, WI, USA (2016.9.18-2016.9.22)] 2016 IEEE Energy Conversion Congress and Exposition (ECCE) - Investigation on the short circuit safe operation area of SiC MOSFET power modules

Diaz Reigosa, Paula, Luo, Haoze, Iannuzzo, Francesco, Blaabjerg, Frede

Year:

2016

Language:

english

File:

PDF, 1.64 MB

english, 2016

17

[IEEE 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) - Tampa, FL, USA (2017.3.26-2017.3.30)] 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) - A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs

Ceccarelli, Lorenzo, Bahman, Amir Sajjad, Iannuzzo, Francesco, Blaabjerg, Frede

Year:

2017

Language:

english

File:

PDF, 2.12 MB

english, 2017

18

Effect of carbon nanotube and functionalized liquid rubber on mechanical and electrical properties of epoxy adhesives for aircraft structures

Vertuccio, L., Guadagno, L., Spinelli, G., Russo, S., Iannuzzo, G.

Journal:

Composites Part B: Engineering

Year:

2017

Language:

english

File:

PDF, 3.41 MB

english, 2017

19

Wire bond degradation under thermo- and pure mechanical loading

Pedersen, Kristian Bonderup, Nielsen, Dennis A., Czerny, Bernhard, Khatibi, Golta, Iannuzzo, Francesco, Popok, Vladimir N., Pedersen, Kjeld

Journal:

Microelectronics Reliability

Year:

2017

Language:

english

File:

PDF, 999 KB

english, 2017

20

[IEEE 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, OH (2017.10.1-2017.10.5)] 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Role of parasitic capacitances in power MOSFET turn-on switching speed limits: A SiC case study

Cittanti, Davide, Iannuzzo, Francesco, Hoene, Eckart, Klein, Kirill

Year:

2017

Language:

english

File:

PDF, 2.77 MB

english, 2017

21

Power cycling test of transfer molded IGBT modules by advanced power cycler under different junction temperature swings

Choi, U.M., Jørgensen, S., Iannuzzo, F., Blaabjerg, F.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 3.25 MB

english, 2018

22

Investigation of acoustic emission as a non-invasive method for detection of power semiconductor aging

Davari, P., Kristensen, O., Iannuzzo, F.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.82 MB

english, 2018

23

Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling

Jia, Yingjie, Huang, Yongle, Xiao, Fei, Deng, Hongfei, Duan, Yaoqiang, Iannuzzo, Francesco

Journal:

IEEE Journal of Emerging and Selected Topics in Power Electronics

Year:

2019

Language:

english

File:

PDF, 8 KB

english, 2019

24

[IEEE 2019 IEEE Energy Conversion Congress and Exposition (ECCE) - Baltimore, MD, USA (2019.9.29-2019.10.3)] 2019 IEEE Energy Conversion Congress and Exposition (ECCE) - Loss and Thermal Modeling of Metal Oxide Varistors (MOV) Under Standard Current Surge Mission Profile

Vernica, Ionut, Jensen, Per Thastrup, Wang, Huai, Iannuzzo, Francesco, Otto, Susanne, Blaabjerg, Frede

Year:

2019

File:

PDF, 2.28 MB

2019

25

Assessment of the Mechanical Properties of AlSi10Mg Parts Produced through Selective Laser Melting Under Different Conditions

Silvestri, Alessia Teresa, Astarita, Antonello, Hassanin, Andrea El, Manzo, Alessandro, Iannuzzo, Ubaldo, Iannuzzo, Generoso, Rosa, Vincenzo De, Acerra, Francesco, Squillace, Antonino

Journal:

Procedia Manufacturing

Year:

2020

File:

PDF, 1.43 MB

2020

26

[IEEE 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - New Orleans, LA, USA (2020.3.15-2020.3.19)] 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - Lifetime Evaluation of Power Modules for Three-Level 1500-V Photovoltaic Inverters

He, Jinkui, Sangwongwanich, Ariya, Yang, Yongheng, Iannuzzo, Francesco

Year:

2020

File:

PDF, 1.41 MB

2020

27

Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications

G. Busatto, L. Fratelli, C. Abbate, R. Manzo, F. Iannuzzo

Journal:

Microelectronics Reliability

Year:

2004

File:

PDF, 999 KB

2004

28

Non-destructive Testing Technique for MOSFET’s Characterisation during Soft-Switching ZVS Operations

Francesco Iannuzzo

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 2.86 MB

english, 2005

29

High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs

Journal:

Microelectronics Reliability

Year:

2008

Language:

english

File:

PDF, 794 KB

english, 2008

30

IGBT modules robustness during turn-off commutation

Busatto, G., Abbate, C., Abbate, B., Iannuzzo, F.

Journal:

Microelectronics Reliability

Year:

2008

Language:

english

File:

PDF, 1017 KB

english, 2008

31

IGBT RBSOA non-destructive testing methods: Analysis and discussion

Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo

Journal:

Microelectronics Reliability

Year:

2010

Language:

english

File:

PDF, 1.16 MB

english, 2010

32

Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET

G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi

Journal:

Microelectronics Reliability

Year:

2010

Language:

english

File:

PDF, 893 KB

english, 2010

33

Mechanical and barrier properties of epoxy resin filled with multi-walled carbon nanotubes

Liberata Guadagno, Luigi Vertuccio, Andrea Sorrentino, Marialuigia Raimondo, Carlo Naddeo, Vittoria Vittoria, Generoso Iannuzzo, Erika Calvi, Salvatore Russo

Journal:

Year:

2009

Language:

english

File:

PDF, 1.07 MB

english, 2009

34

The high frequency behaviour of high voltage and current IGBT modules

C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 405 KB

english, 2006

35

Experimental evidence of “latent gate oxide damages” in medium voltage power MOSFET as a result of heavy ions exposure

Busatto, G., Currò, G., Iannuzzo, F., Porzio, A., Sanseverino, A., Velardi, F.

Journal:

Microelectronics Reliability

Year:

2008

Language:

english

File:

PDF, 487 KB

english, 2008

36

Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions

G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 865 KB

english, 2009

37

MAGFET based current sensing for power integrated circuit

Giovanni Busatto, Roberto La Capruccia, Francesco Iannuzzo, Francesco Velardi, Roberto Roncella

Journal:

Microelectronics Reliability

Year:

2003

Language:

english

File:

PDF, 474 KB

english, 2003

38

Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment

F. Velardia, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Currò, A. Cascio, F. Frisina

Journal:

Microelectronics Reliability

Year:

2003

File:

PDF, 1.23 MB

2003

39

Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement

G. Busatto, F. Iannuzzo, F. Velardi, M. Valentino, G.P. Pepe

Journal:

Microelectronics Reliability

Year:

2003

File:

PDF, 1.47 MB

2003

40

Comparison of two diets of varying glycemic index on carotid subclinical atherosclerosis in obese children

Arcangelo Iannuzzi, Maria Rosaria Licenziati, Maria Vacca, Donata De Marco, Giorgio Cinquegrana, Marco Laccetti, Alessandro Bresciani, Giuseppe Covetti, Gabriella Iannuzzo, Paolo Rubba, Mario Parillo

Journal:

Heart and Vessels

Year:

2009

Language:

english

File:

PDF, 206 KB

english, 2009

41

Experimental and Numerical investigation about SEB/SEGR of Power MOSFET

G. Busatto, A. Porzio, F. Velardi, F. Iannuzzo, A. Sanseverino, G. Currò

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 503 KB

english, 2005

42

The robustness of series-connected high power IGBT modules

C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone, R. Manzo

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 963 KB

english, 2007

43

Instable mechanisms during unclamped operation of high power IGBT modules

G. Busatto, C. Abbate, F. Iannuzzo, P. Cristofaro

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 1.43 MB

english, 2009

44

Non-destructive high temperature characterisation of high-voltage IGBTs

G. Busatto, B. Cascone, L. Fratelli, M. Balsamo, F. Iannuzzo, F. Velardi

Journal:

Microelectronics Reliability

Year:

2002

File:

PDF, 1.82 MB

2002

45

Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact

F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Candelori

Journal:

Microelectronics Reliability

Year:

2003

Language:

english

File:

PDF, 269 KB

english, 2003

46

A new test methodology for an exhaustive study of single-event-effects on power MOSFETs

G. Busatto, D. Bisello, G. Currò, P. Giubilato, F. Iannuzzo, S. Mattiazzo, D. Pantano, A. Sanseverino, L. Silvestrin, M. Tessaro, F. Velardi, J. Wyss

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.11 MB

english, 2011

47

Unclamped repetitive stress on 1200 V normally-off SiC JFETs

C. Abbate, G. Busatto, F. Iannuzzo

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 1.71 MB

english, 2012

48

Reliability oriented design of power supplies for high energy physics applications

S. Baccaro, G. Busatto, M. Citterio, P. Cova, N. Delmonte, F. Iannuzzo, A. Lanza, M. Riva, A. Sanseverino, G. Spiazzi

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 1.39 MB

english, 2012

49

Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure

G. Busatto, V. De Luca, F. Iannuzzo, A. Sanseverino, F. Velardi

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 834 KB

english, 2012

50

Thermal instability during short circuit of normally-off AlGaN/GaN HFETs

Abbate, C., Iannuzzo, F., Busatto, G.

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.64 MB

english, 2013